Determination of Trace Anions in High-Purity Gases in Semiconductor Processes

Published: Journal of Chromatographic Science, Volume 36, Number 12, December 1998, pp. 579-583.

Determination of Trace Anions in High-Purity Gases in Semiconductor Processes
Wen Ruimei

This study involves testing for trace quantities of anions in high-purity gases (N₂, H₂, O₂, Ar, He, HCl, CO₂, NH₃, SiH₄, PH₃, and AsH₃) used in the electronics industry. A set of gas sampling devices is designed and constructed using membrane filtration (0.45 µm) in conjunction with solution absorption. In order to increase the detection sensitivity, the detection system was improved by using a large volume sampler (480 µL) instead of the conventional concentrator column. The ion chromatography method in this study is successful in determining F–, Cl–, NO₃–, HPO42–, and SO42– in 11 types of high-purity gases. This method is sensitive and accurate and meets the needs of anion-contamination control during the production of high-purity gases and very-large-scale integration processing.

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